发明名称 |
Semiconductor Device Producing Method, Substrate Producing Method and Substrate Processing Apparatus |
摘要 |
A method is provided with a step of supplying a reacting furnace (200) with a plurality of gases which react each other and an inert gas and oxidizing a substrate (20) under an atmospheric pressure, and a step of carrying out the substrate (20) after oxidizing from the reacting furnace. In the oxidizing step, the partial pressure of the oxidizing gas is kept constant by changing a flow quantity of the inert gas in accordance with atmospheric pressure variation, and a flow quantity of the inert gas is calculated based on a previously calculated flow quantity of a gas generated by the reaction of the gases and a gas remained without being consumed by the reaction.
|
申请公布号 |
US2010029092(A1) |
申请公布日期 |
2010.02.04 |
申请号 |
US20060887347 |
申请日期 |
2006.03.30 |
申请人 |
HITACHI KIKUSAI ELECTRIC INC. |
发明人 |
NAKAMURA NAOTO;NAKAMURA IWAO;SASAJIMA RYOTA |
分类号 |
H01L21/30;B05C11/00 |
主分类号 |
H01L21/30 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|