| 摘要 |
<p>PURPOSE: A thin film transistor plate, a manufacturing method thereof, and a liquid crystal display device thereof are provided to reduce production costs and time by reducing the number of photoetching processes. CONSTITUTION: A thin film transistor(125) includes a gate line(121), and a data line(141), and a semiconductor layer(132). A passivation layer(161) is formed on the thin film transistor. A pixel electrode(171) is connected to the thin film transistor. The passivation layer includes a contact hole(172) and bank units(173a,173b). The bank units are connected to the contact hole. The pixel electrode is formed on the bank units. The pixel electrode is connected to the thin film transistor through the contact hole. The passivation layer includes a column type spacer(180).</p> |
