| 摘要 |
PURPOSE: A plasma processing method is provided to perform the plasma processing of the high quality about the processed body. CONSTITUTION: The silicon substrate is prepared within the process chamber(102). The silicon oxidation film is formed in the silicon substrate. The nitrogen gas is introduced within the process chamber on the silicon oxide film. Using the antenna member(120), the plasma is generated. Using the plasma, the plasma processing of the silicon substrate is operated. The antenna member includes the slot electrode(200). The slot electrode has a plurality of slits. The gate insulating layer is formed.
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