| 摘要 |
FIELD: chemistry. ^ SUBSTANCE: invention relates to a method of producing heat-resistant positive photoresist, which is used as a protective coating in interlayer insulation in multilevel electronic devices. The method of producing heat-resistant positive photoresist involves polycondensation of dichloride of isophthalic acid with a mixture of 3,3'-dihydroxy-4,4'-diaminodiphenylmethane and bis-(3-aminopropyl)dimethylsiloxane in an amide solvent with ratio of amine components ranging from 9:1 to 1:9 mol %. A solution of the photosensitive component ,-bis-naphthoquinondiazido-(1,2)-5-sulphoether-(4-hydroxyphenyl)propane in amide solvent is added directly to the reaction mass after completion of the polycondensation reaction. To obtain the phororesist, the following ratio of components is chosen, wt %: reaction solution of poly(o-hydroxyamide) - 80-90; ,-bis-naphthoquinondiazido -(1,2)-5-sulphoether-(4-hydroxyphenyl)propane - 1.5-6.5; amide solvent - the rest. ^ EFFECT: obtained heat-resistant positive photoresist reliably provides for formation of high resolution, adhesive-strong, chemically stable positive microrelief on combined, including silicon-containing substrates. ^ 3 cl, 3 ex |
