| 摘要 |
<p>PURPOSE: A method for fabricating non-volatile memory device is provided to easily remove a dielectric film at a peripheral circuit region by forming the dielectric film over a product. CONSTITUTION: A floating gate pattern is formed on a substrate. An oxide film(450) of the prescribed thickness is formed on the peripheral circuit region of the product. The Floating gate pattern is formed on the product. A dielectric film(460) is formed on the whole of an oxidation film-formed product. A protective film(470) is formed on the whole of a dielectric film-formed product. The dielectric film on the peripheral circuit region is removed a planarization process which is performed until the hard mask layer(430) is exposed to the outside.</p> |
