发明名称 Method for decreasing program disturb in memory cells
摘要 The present invention provides a method for decreasing program disturb in memory cells, comprising: finding an initial programming condition that ensures programming memory cell normally; selecting two parameters from the initial programming condition as variables for a program disturb test; performing the program disturb test to the memory cell for at least two combined values of the variables; obtaining a programming condition with minimum program disturb based on the result of the program disturb test; and applying the programming condition with minimum program disturb as the programming condition for memory cell. The method according to the present invention can minimize the program disturb in memory cells and can be performed easily.
申请公布号 US7649771(B2) 申请公布日期 2010.01.19
申请号 US20070875822 申请日期 2007.10.19
申请人 SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION 发明人 MIU KENNETH;TAN LEONG SENG;ZHONG CAN;LIU JIANCHANG
分类号 G11C11/34;G11C16/04;G11C16/06 主分类号 G11C11/34
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