FLASH MEMORY DEVICE AND PROGRAMMING METHOD THEREOF

摘要

PURPOSE: A flash memory device and a program method thereof are provided to increase a pass voltage window by differently applying a pass voltage to programmed memory cells and memory cells which are not programmed. CONSTITUTION: An SI controller(50) supplies one of a plurality of high voltages generated from a high voltage generator(55) to a word line driver controlling a word line. A selection area SI controller(10) supplies one of the plurality of high voltages to an SI driver(30) in response to an active signal transmitted from an SI selection determiner(40). The Si selection determiner determines whether the corresponding address is the selected area or non-selected area based on the address information.