发明名称 METHOD OF MANUFACTURING BAW RESONANCE DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a BAW resonance device for improving crystallinity in a piezoelectric layer made of a lead-based piezoelectric material, and suppressing the erosion of a lower electrode while restraining an increase in etching time for forming an opening. <P>SOLUTION: The method includes an opening formation process (Fig.1(g)). In the opening formation process, a resonator 3 is formed at one surface side of a support substrate 1 comprising an MgO substrate (Fig.1(e)), a resist layer 7 is formed on the entire surface at one surface side of the support substrate 1 and a resist layer 6 patterned for the formation of the opening 1a is formed at the other surface side of the support substrate 1, and the opening 1a is formed by wet-etching a portion corresponding to the opening 1a in the support substrate 1 from the other surface side of the support substrate 1. In the opening formation process, if wet-etching is started, its etching rate is decreased before the exposure of a surface at a side opposite to the side of the piezoelectric layer 32 in the lower electrode 31. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010010933(A) 申请公布日期 2010.01.14
申请号 JP20080166213 申请日期 2008.06.25
申请人 PANASONIC ELECTRIC WORKS CO LTD 发明人 YAMAUCHI NORIHIRO;YOSHIHARA TAKAAKI;SHIRAI TAKEO;MATSUSHIMA CHOMEI;HAYAZAKI YOSHIKI
分类号 H03H3/02;H01L41/09;H01L41/18;H01L41/22;H01L41/39;H03H9/17 主分类号 H03H3/02
代理机构 代理人
主权项
地址
您可能感兴趣的专利