| 摘要 |
The solid-state imaging device includes at least a silicon layer formed with a photo sensor portion and a wiring layer formed on the front-surface side of the silicon layer. Light enters from the rear-surface side opposite to the front-surface side of the silicon layer and the thickness of the silicon layer 4 is 10 mum or less. The photo sensor portion includes sensors configured to convert the light into signals representing an image. Each of the sensors includes a relatively highly doped first conductivity type region adjacent the front surface side of the silicon layer and serving as a charge storage region, a first relatively lightly doped second conductivity type region extending from the charge storage region toward the rear surface side of the silicon layer and serving as a photo sensitive region, a second relatively highly doped second conductivity type region extending from the front surface side of the silicon layer toward the rear surface side of the silicon layer and serving as a floating diffusion region, and a relatively lightly doped region of the first conductivity type between the floating diffusion region and the charge storage region and under one of the at least one read out gate electrode and serving as a charge read out region.
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