发明名称 |
Fotomaskenrohling, Fotomaske und ihre Herstellungsmethode |
摘要 |
<p>A light-shieldable film (12) is formed on one principal plane of an optically transparent substrate (11), and the light-shieldable film (12) has a first light-shieldable film (13) and a second light-shieldable film (14) overlying the first light-shieldable film (13). The first light-shieldable film (13) is a film that is not substantially etched by fluorine-based (F-based) dry etching and is primarily composed of chromium oxide, chromium nitride, chromium oxynitride or the like. The second light-shieldable film (14) is a film that is primarily composed of a silicon-containing compound that can be etched by F-based dry etching, such as silicon oxide, silicon nitride, silicon oxynitride, silicon/transition-metal oxide, silicon/transition-metal nitride or silicon/transition-metal oxynitride.</p> |
申请公布号 |
DE602005017861(D1) |
申请公布日期 |
2010.01.07 |
申请号 |
DE20056017861T |
申请日期 |
2005.10.18 |
申请人 |
SHIN-ETSU CHEMICAL CO. LTD.;TOPPAN PRINTING CO. LTD. |
发明人 |
YOSHIKAWA, HIROKI;INAZUKI, YUKIO;KINASE, YOSHINORI;OKAZAKI, SATOSHI;HARAGUCHI, TAKASHI;IWAKATA, MASAHIDE;FUKUSHIMA, YUICHI |
分类号 |
G03F1/00 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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