SUBSTRATE TREATING APPARATUS AND METHOD FOR SELECTIVELY ETCHING A SUBSTRATE SURFACES

摘要

PURPOSE: A substrate treating apparatus and method for selectively etching a substrate surfaces are provided to control the etching consume rate about inside of substrate the intended region. CONSTITUTION: The substrate processing apparatus(1) comprises the spin head(130) and the first nozzle(210). The spin head revolves while supporting the substrate (W). The first nozzle of the etchant is formed on the top of the substrate. The substrate processing apparatus more includes the second nozzle(220) and controller(240). The second nozzle of the etching disturbance fluid is formed on the top of the substrate. The controller respectively positions the first and second nozzles in center and peripheral areas of substrate.