| 摘要 |
PURPOSE: A gallium nitride substrate and its processing method are provided to secure stable high yield and quality of a Gallium substrate by removing metal contaminant from the Gallium substrate through a cleaning process. CONSTITUTION: A gallium nitride substrate and its processing method includes an organic cleaning for removing an organic contaminant from the Gallium substrate and also includes an acid cleaning for removing a metal contaminant from the Gallium substrate. In the organic cleaning, at least one of TCE(Tri-Chloro-Etylene), an acetone, and isopropanol is used as a cleaning solution. In the organic cleaning step, the cleaning by TCE, and the cleaning by acetone, and the cleaning by isopropanol are processed successively.
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