Memory cells with planar FETs and vertical FETs with a region only in upper region of a trench and methods of making and using same

摘要

In a first aspect, a first apparatus is provided. The first apparatus is a memory cell of a substrate that includes (1) a PFET with an orientation approximately planar to a surface of the substrate; and (2) an NFET coupled to the approximately planar PFET. An orientation of the NFET in the substrate is approximately perpendicular to the orientation of the PFET. Numerous other aspects are provided.