发明名称 |
System and Method to Fabricate Magnetic Random Access Memory |
摘要 |
A system and method to fabricate magnetic random access memory is disclosed. In a particular embodiment, a method of aligning a magnetic film during deposition is disclosed. The method includes applying a first magnetic field along a first direction in a region in which a substrate resides during a deposition of a first magnetic material onto the substrate. The method further includes applying a second magnetic field along a second direction in the region during the deposition of the first magnetic material onto the substrate.
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申请公布号 |
US2009323410(A1) |
申请公布日期 |
2009.12.31 |
申请号 |
US20080164272 |
申请日期 |
2008.06.30 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
LI XIA;ZHU XIAOCHUN;KANG SEUNG H. |
分类号 |
G11C11/14;B05B5/025;H01L21/64 |
主分类号 |
G11C11/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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