发明名称 System and Method to Fabricate Magnetic Random Access Memory
摘要 A system and method to fabricate magnetic random access memory is disclosed. In a particular embodiment, a method of aligning a magnetic film during deposition is disclosed. The method includes applying a first magnetic field along a first direction in a region in which a substrate resides during a deposition of a first magnetic material onto the substrate. The method further includes applying a second magnetic field along a second direction in the region during the deposition of the first magnetic material onto the substrate.
申请公布号 US2009323410(A1) 申请公布日期 2009.12.31
申请号 US20080164272 申请日期 2008.06.30
申请人 QUALCOMM INCORPORATED 发明人 LI XIA;ZHU XIAOCHUN;KANG SEUNG H.
分类号 G11C11/14;B05B5/025;H01L21/64 主分类号 G11C11/14
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