发明名称 Semiconductor memory device with bi-directional read and write data transport
摘要 A semiconductor memory device includes a pair of local input/output (IO) lines, a global IO line, a local driver configured to pull up/down voltage levels of the first and second local IO lines in response to input data, a global driver configured to pull up/down a voltage level of the global IO line in response to input data, and a data IO control block configured to transport output data from the local IO lines to the global driver and input data from the global IO line to the local driver.
申请公布号 US7639550(B2) 申请公布日期 2009.12.29
申请号 US20070819821 申请日期 2007.06.29
申请人 HYNIX SEMICONDUCTOR, INC. 发明人 HA SUNG-JOO
分类号 G11C7/00 主分类号 G11C7/00
代理机构 代理人
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