| 摘要 |
<p>PURPOSE: A flash memory device and a manufacturing method thereof are provided to prevent damage to a tunnel oxide film and a dielectric film at a VPC(HF Vapor) process by forming a barrier pattern to a side wall of a gate stack. CONSTITUTION: A tunnel oxide film pattern(31) is formed on a semiconductor substrate(10). A floating gate(41) is formed on the tunnel oxide film pattern. An ONO(Oxide-Nitride-Oxide) pattern is formed on the floating gate. A control gate(61) is formed on the ONO pattern. A hard mask pattern(71) is formed on the control gate. A barrier pattern(81) is formed to a side wall of a gate stack(100) including the tunnel oxide film pattern, the floating gate, the ONO pattern, the control gate, and the hard mask pattern.</p> |
