发明名称 STEPPED UPPER ELECTRODE FOR PLASMA PROCESSING UNIFORMITY
摘要 <p>A plasma discharge electrode having a front surface with a central portion thereof including gas outlets discharging a process gas which forms a plasma and a peripheral portion substantially surrounding the gas outlets. The peripheral portion has at least one step for controlling a density of the plasma formed by the electrode. The electrode can be used as the grounded upper electrode in a parallel plate plasma processing apparatus such as a plasma etching apparatus. The geometric features of the step and of a corresponding edge ring on the lower electrode can be varied to achieve the desired etch rate profile across a wafer surface.</p>
申请公布号 EP1336191(B1) 申请公布日期 2009.12.23
申请号 EP20010979979 申请日期 2001.10.10
申请人 LAM RESEARCH CORPORATION 发明人 DHINDSA, RAJINDER;SRINIVASAN, MUKUND;EPPLER, AARON;LENZ, ERIC
分类号 H01J37/32;H01L21/3065 主分类号 H01J37/32
代理机构 代理人
主权项
地址