发明名称 |
STEPPED UPPER ELECTRODE FOR PLASMA PROCESSING UNIFORMITY |
摘要 |
<p>A plasma discharge electrode having a front surface with a central portion thereof including gas outlets discharging a process gas which forms a plasma and a peripheral portion substantially surrounding the gas outlets. The peripheral portion has at least one step for controlling a density of the plasma formed by the electrode. The electrode can be used as the grounded upper electrode in a parallel plate plasma processing apparatus such as a plasma etching apparatus. The geometric features of the step and of a corresponding edge ring on the lower electrode can be varied to achieve the desired etch rate profile across a wafer surface.</p> |
申请公布号 |
EP1336191(B1) |
申请公布日期 |
2009.12.23 |
申请号 |
EP20010979979 |
申请日期 |
2001.10.10 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
DHINDSA, RAJINDER;SRINIVASAN, MUKUND;EPPLER, AARON;LENZ, ERIC |
分类号 |
H01J37/32;H01L21/3065 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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