| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce a consumption current during a self refresh mode without impairing high speed access operation. Ž<P>SOLUTION: When an operation mode specification signal specifies a refresh mode, a refresh region specification address specifying a region to be refreshed in a memory array is stored in an address register (87). A refresh address generation circuit (20b, 86 and 88) generates a refresh address so as to refresh a memory cell in the region specified by the refresh region specification address, when the operation mode specification signal specifies the refresh mode. A refresh system circuit refreshes the memory cell selected according to the refresh address from the refresh address generation circuit, responsive to a refresh request issued by a refresh timer (85) at predetermined intervals. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
