| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing tetra-t-butoxyhafnium, tetrakis(acetylacetonato)hafnium, tetrakis(1-methoxy-2-methyl-2-propanolato)hafnium or the like, which is a raw material for producing films in the production of semiconductors. SOLUTION: Provided is a method for producing the tetra-t-butoxyhafnium, tetrakis(acetylacetonato)hafnium, tetrakis(1-methoxy-2-methyl-2-propanolato)hafnium or the like, which comprises a process of adding a compound represented by general formula: A(O<SB>y</SB>XO<SB>n</SB>R<SB>f</SB>)<SB>m</SB>to a hafnium amide complex represented by general formula: Hf[N(R<SB>1</SB>)(R<SB>2</SB>)]<SB>4</SB>and then vacuum-distilling the mixture, a process of adding a lithium alkylamide represented by general formula: Li(NR<SB>3</SB>R<SB>4</SB>) to the obtained distillate and then vacuum-distilling the mixture, and a process of adding t-butanol, acetylacetone, 1-methoxy-2-methyl-2-propanol or the like to the resultant distillate and then vacuum-distilling the mixture. COPYRIGHT: (C)2010,JPO&INPIT
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