发明名称 |
SEMICONDUCTOR LAYER |
摘要 |
<p>To provide a semiconductor layer in which a GaN system epitaxial layer having high crystal quality can be obtained. The semiconductor layer includes a ²-Ga 2 O 3 substrate 1 made of a ²-Ga 2 O 3 single crystal, a GaN layer 2 formed by subjecting a surface of the ²-Ga 2 O 3 substrate 1 to nitriding processing, and a GaN growth layer 3 formed on the GaN layer 2 through epitaxial growth by utilizing an MOCVD method. Since lattice constants of the GaN layer 2 and the GaN growth layer 3 match each other, and the GaN growth layer 3 grows so as to succeed to high crystalline of the GaN layer 2, the GaN growth layer 3 having high crystalline is obtained.</p> |
申请公布号 |
EP1653502(A4) |
申请公布日期 |
2009.12.16 |
申请号 |
EP20040771516 |
申请日期 |
2004.08.04 |
申请人 |
KOHA CO., LTD. |
发明人 |
ICHINOSE, NOBORU;SHIMAMURA, KIYOSHI;AOKI, KAZUO;GARCIA VILLORA, ENCARNACION ANTONIA |
分类号 |
C30B29/38;H01L21/20;C23C16/34;C30B25/02;C30B25/20;H01L21/205;H01L29/201;H01L33/32;H01S5/343 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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