SUPPORTING SUBSTRATE FOR FABRICATION OF SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE SAME

摘要

The present invention is a supporting substrate for fabrication of a semiconductor light emitting device using a light emitting multilayer structure film and a method for fabricating a semiconductor light emitting device using the supporting substrate.  The supporting substrate comprises a sacrificial layer, a heat sink layer and a bonding layer, which are sequentially laminated over a selected supporting substrate.  The method for fabricating semiconductor light emitting devices, comprises: preparing a first wafer over a first growth substrate, the first wafer having a light emitting multilayer structure laminated/grown thereon; preparing a second wafer for use as a supporting substrate for fabrication of a semiconductor lighting emitting device; bonding the second wafer onto the first wafer; decoupling the first growth substrate of the first wafer from the resulting bonded object; forming a first ohmic contact electrode over the first wafer from which the first growth substrate has been decoupled and performing passivation; and cutting the passivated object to fabricate single chips.