发明名称 INTEGRATED CIRCUITS AND INTERCONNECT STRUCTURE FOR INTEGRATED CIRCUITS
摘要 An integrated circuit comprises N plane-like metal layers, where N is an integer greater than one. A first plane-like metal layer includes M contact portions that communicate with the N plane-like metal layers, respectively, where M is an integer greater than one. The first plane-like metal layer and the N plane-like metal layers are located in separate planes. At least two of a first source, a first drain and a second source communicate with at least two of the N plane-like metal layers. A first gate is arranged between the first source and the first drain. A second gate is arranged between the first drain and the second source. The first and second gates define alternating first and second regions in the first drain, and wherein the first and second gates are arranged farther apart in the first regions than in the second regions.
申请公布号 WO2008115468(A4) 申请公布日期 2009.12.10
申请号 WO2008US03491 申请日期 2008.03.17
申请人 MARVELL WORLD TRADE LTD.;SUTARDJA, SEHAT 发明人 SUTARDJA, SEHAT
分类号 H01L23/482;H01L23/538;H01L27/092 主分类号 H01L23/482
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