| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile storage enabling a high storage capacity preventing extraction from a memory layer from being complicated even in increasing the number of laminated memory layers. SOLUTION: In the nonvolatile storage, a plurality of unit memory layers including first wiring, second wiring provided in nonparallel with the first wiring, and a recording layer provided between the first wiring and the second wiring are piled up in a direction vertical to the layer surface of each unit memory layer. The nonvolatile storage includes a layer selecting transistor that is connected to at least one of the first wiring and second wiring of each of the unit memory layers and collectively selects at least one of the first wiring and the second wiring on the same plane. COPYRIGHT: (C)2010,JPO&INPIT |
