| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a magnetic random access memory with an elliptical junction. <P>SOLUTION: This magnetic random access memory (MRAM) cell of a magnetic tunnel junction (MTJ) using a thermally assisted switching (TAS) writing procedure includes a magnetic tunnel junction portion formed from: a ferromagnetic storage layer having a magnetization that is adjustable above a high temperature threshold; a reference layer having a fixed magnetization; and an insulating layer arranged between the storage layer and the reference layer. The magnetic tunnel junction portion has an anisotropic shape, and wherein the ferromagnetic storage layer has a magnetocrystalline anisotropy being oriented essentially perpendicular to the long axis of the anisotropic shape of the junction. The TAS MTJ-based MRAM cell limits advantageously the effects of the junction shape anisotropy dispersion coming from the fabrication process and has a lower power consumption in comparison with conventional MTJ-based MRAM and TAS MTJ-based MRAM cells of the prior art. and wherein the ferromagnetic storage layer is related to a TAS MTJ base MRAM cell having crystal magnetic anisotropy of orientation essentially orthogonal to a long axis of the anisotropic shape of the junction portion. <P>COPYRIGHT: (C)2010,JPO&INPIT |
