| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of programming a nonvolatile memory device to set a program start voltage in consideration of the program speed of each cell. SOLUTION: The method of programming the nonvolatile memory device includes steps of: performing a program operation on a first page; counting a program pulse application number until the program operation on the first page is completed; comparing the counted program pulse application number with a threshold to reset the program start voltage; and performing the program operation on a second page using the reset program start voltage. COPYRIGHT: (C)2010,JPO&INPIT
|
