发明名称 CHEMICAL MECHANICAL POLISHING PAD AND CHEMICAL MECHANICAL POLISHING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing pad which suppresses damage to a polishing layer during chemical mechanical polishing and has a long product life, and a chemical mechanical polishing method using the chemical mechanical polishing pad to offer high quality. <P>SOLUTION: The chemical mechanical polishing pad used for chemical mechanical polishing includes a polishing layer having: a polishing surface which comes into contact with an object to be polished to carry out chemical mechanical polishing; a non-polishing surface at the opposite side to the polishing surface; a first recess formed in an area on the polishing surface including a central portion; and a second recess formed at a position on the non-polishing surface, the position being opposite at least to part of the first recess. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009283538(A) 申请公布日期 2009.12.03
申请号 JP20080131733 申请日期 2008.05.20
申请人 JSR CORP 发明人 TANO HIROYUKI
分类号 H01L21/304;B24B37/26 主分类号 H01L21/304
代理机构 代理人
主权项
地址
您可能感兴趣的专利