发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device adopting penetration electrodes, thin, and having improved mechanical strength, and to provide a method of manufacturing the semiconductor device. <P>SOLUTION: The method of manufacturing the semiconductor device includes: preparing a plurality of semiconductor elements 11 with penetration electrodes 13, provided to penetrate a semiconductor chip in a thickness direction; disposing the semiconductor elements 11 in a matrix form on a sheet 36; laying the sheet 36, provided with the semiconductor elements, in a cavity 20C of a sealing mold 20A; injecting sealing resin 12 into the cavity; and dicing to divide the sealing resin in the portions positioned in peripheries of individual semiconductor elements. The problem is solved by adhering coating resin 12A on the sheet. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2009283957(A) 申请公布日期 2009.12.03
申请号 JP20090164660 申请日期 2009.07.13
申请人 SANYO ELECTRIC CO LTD;KANTO SANYO SEMICONDUCTORS CO LTD 发明人 KAMEYAMA KOJIRO;MITA KIYOSHI;HORINAKA KAZUMI
分类号 H01L23/12;H01L21/56 主分类号 H01L23/12
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