| 摘要 |
PURPOSE: A method for manufacturing semiconductor apparatus and semiconductor apparatus manufactured thereby are provided to multiply the current driving force of transistor by forming the multichannel pin transistor having 3D channel structure. CONSTITUTION: The channel region and gate region are formed in the cell region through the self align etch. The multi channel area of three dimensional structures is formed in the core region and peripheral area through the etching using the first multi channel mask. The gate region is formed in the core region and peripheral area through the etching using the second multi channel mask. The element isolation film(405) is formed in the semiconductor substrate(401). A plurality of hard mask films is formed in the substrate semiconductor. The photosensitive film(408) is evaporated on a plurality of hard mask films.
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