CLEANING APPARATUS AND METHOD OF CLEANING USING THE CLEANING APPARATUS

摘要

PURPOSE: A cleaning device and a cleaning method using the same are provided to remove byproduct and form an oxide film with uniform thickness by minimizing a step of an oxide film formed in an edge part of a wafer and the center of the wafer using the cleaning device including a rotation unit. CONSTITUTION: A cleaning gas supply unit(2) is arranged in a chamber(1) and provides the cleaning gas. A wafer chuck(5) is arranged in the chamber, faces the cleaning gas supply unit and loads a wafer(6). A rotation unit(8) rotates the wafer to control the flow rate of the cleaning gas in contact with the edge part of the wafer and the inflow of the cleaning gas in contact with the center of the wafer. The cleaning gas is HF, CF4, and NH3. The cleaning gas supply unit includes a first gas provider(3), a second gas provider(4), and a cleaning gas spray unit.