发明名称 Thin film electronic device and methods for fabricating an electronic device
摘要 <p>An electronic device, comprising a transparent substrate; a first electrical contact located over the transparent substrate; a dielectric layer located over the first electrical contact; a second electrical contact located over the dielectric layer and overlapping at least with a portion of the first electrical contact, the first electrical contact and the second electrical contact being opaque to an exposing radiation; an electrically insulating layer being formed of a cured photosensitive via layer material and located over the dielectric layer such that a portion of the dielectric layer that is covered by the second electrical contact and another portion of the dielectric layer that covers a top portion of the gate electrode is uncovered by electrically insulating layer and provides a recess in a cured portion of the electrically insulating layer, a semiconducting layer located over the second electrical contact; a third electrical contact located over the semiconducting layer, wherebyan electrical current between the second and third electrical contacts is controlled by the first electrical contact, and the second electrical contact, the semiconducting layer and the third electrical contact are located in the recess of the electrically insulating layer.</p>
申请公布号 EP2128902(A2) 申请公布日期 2009.12.02
申请号 EP20090168457 申请日期 2004.12.15
申请人 PALO ALTO RESEARCH CENTER INCORPORATED 发明人 CHABINYC, MICHAEL L.;SALLEO, ALBERTO;WONG, WILLIAM S.
分类号 H01L21/28;H01L29/417;H01L21/00;H01L21/336;H01L29/41;H01L29/76;H01L29/786;H01L51/00;H01L51/05;H01L51/40 主分类号 H01L21/28
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