METHOD FOR CONTROLLING THE OPERATING TEMPERATURE OF A SEMICONDUCTOR POWER COMPONENT, AND COMPONENT FOR CARRYING OUT SAID METHOD

摘要

Disclosed is a method for electrically controlling the operating temperature of MOS-controlled semiconductor power components. In said method, the electric resistance of the gate electrode material, and thus the temperature, is measured between two contact points (8, 9) on the gate electrode (4) by means of a test voltage that is superimposed on the gate voltage (UG) during operation of the component, the temperature coefficient of the electric resistance being known. The power loss on the gate electrode is adjusted by means of the gate voltage according to the measured temperature. If a plurality of pairs of contact points are provided, at least one of which is disposed in parts of the gate electrode (4) that are electrically isolated from each other, the temperature can be measured and controlled in a location-specific and accurate manner and quasi without delay. Components comprising additional contacts for carrying out said method are also described.