发明名称 Method for manufacturing semiconductor device
摘要 It is an object of the invention to provide a peeling method which does not damage a peeling layer, and to perform peeling not only a peeling layer having a small-size area but also an entire peeling layer having a large-size area with a preferable yield. In the invention, after pasting a fixing substrate, a part of a glass substrate is removed by scribing or performing laser irradiation on the glass substrate which leads to providing a trigger. Then, peeling is performed with a preferable yield by performing peeling from the removed part. In addition, a crack is prevented by covering the entire face except for a connection portion of a terminal electrode (including a periphery region of the terminal electrode) with a resin.
申请公布号 US7622361(B2) 申请公布日期 2009.11.24
申请号 US20070822609 申请日期 2007.07.09
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 GOTO YUUGO;FUKUMOTO YUMIKO;TAKAYAMA TORU;MARUYAMA JUNYA;TSURUME TAKUYA
分类号 H01L21/46;H01L29/786;H01L21/30;H01L21/301;H01L21/762;H01L21/77;H01L21/78;H01L21/84;H01L27/12;H01L27/32;H01L51/52;H01L51/56 主分类号 H01L21/46
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