发明名称 |
Method for manufacturing semiconductor device |
摘要 |
It is an object of the invention to provide a peeling method which does not damage a peeling layer, and to perform peeling not only a peeling layer having a small-size area but also an entire peeling layer having a large-size area with a preferable yield. In the invention, after pasting a fixing substrate, a part of a glass substrate is removed by scribing or performing laser irradiation on the glass substrate which leads to providing a trigger. Then, peeling is performed with a preferable yield by performing peeling from the removed part. In addition, a crack is prevented by covering the entire face except for a connection portion of a terminal electrode (including a periphery region of the terminal electrode) with a resin.
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申请公布号 |
US7622361(B2) |
申请公布日期 |
2009.11.24 |
申请号 |
US20070822609 |
申请日期 |
2007.07.09 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
GOTO YUUGO;FUKUMOTO YUMIKO;TAKAYAMA TORU;MARUYAMA JUNYA;TSURUME TAKUYA |
分类号 |
H01L21/46;H01L29/786;H01L21/30;H01L21/301;H01L21/762;H01L21/77;H01L21/78;H01L21/84;H01L27/12;H01L27/32;H01L51/52;H01L51/56 |
主分类号 |
H01L21/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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