发明名称 Thin film transistor substrate and fabricating method thereof, liquid crystal display panel using the same and fabricating method thereof
摘要 A thin film transistor substrate and a fabricating method thereof; and a liquid crystal display panel employing the same and a fabricating method thereof for simplifying a process are disclosed. A thin film transistor substrate, including: a gate line on a substrate; a data line crossing the gate line having a gate insulating film therebetween to define a pixel area; a pixel hole in the pixel area; a pixel electrode made of a transparent conductive film on the gate insulating film in the pixel hole in the pixel area; and a thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode connected to the pixel electrode, and a semiconductor layer defining a channel between the source electrode and the drain electrode, wherein the semiconductor layer overlaps with a source/drain metal pattern including the data line, the source electrode, and the drain electrode; wherein the drain electrode protrudes from the semiconductor layer toward an upper portion of the pixel electrode, and the drain electrode connects to the pixel electrode; and wherein the semiconductor layer is removed from where it overlaps the transparent conductive film.
申请公布号 US2009284676(A1) 申请公布日期 2009.11.19
申请号 US20090458784 申请日期 2009.07.22
申请人 发明人 AHN BYUNG CHUL;LIM BYOUNG HO;AHN JAE JUN
分类号 G02F1/1368 主分类号 G02F1/1368
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