| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element which enhances light absorption efficiency and does not causes a decrease in manufacture efficiency while securing a long cutoff wavelength. SOLUTION: The semiconductor element has an laminate of alternate epitaxial growth comprising an In<SB>x</SB>Ga<SB>1-x</SB>As<SB>1-y</SB>N<SB>y</SB>(0≤x≤0.6, 0≤y≤0.1) layer 45 and a GaAs<SB>z</SB>Sb<SB>1-z</SB>(0.48≤z≤0.56) layer 46 on an InP substrate 12, and the GaAs<SB>z</SB>Sb<SB>1-z</SB>layer in the laminate has a superlattice structure. COPYRIGHT: (C)2010,JPO&INPIT |
