| 摘要 |
An image sensor and a method for manufacturing the same are provided to make a uniform light being incident into the whole pixel by forming a nitride layer at a pixel edge portion of the image sensor. A passivation layer(40) is formed on a semiconductor substrate(10) having a pixel, plural metal wires(21,31), and plural interlayer dielectrics(20,30). Plural light receiving devices are formed on the pixel. A color filter is formed on the passivation layer. A planarized layer(50) is formed on the color filter. A low temperature nitride layer is formed on the planarized layer. A photoresist pattern is formed at a position corresponding to the light receiving device on the low temperature nitride layer. The low temperature nitride layer is etched by using the photoresist pattern as a mask to form a low temperature nitride layer pattern. The photoresist pattern and the low temperature nitride layer pattern are re-flowed to form a micro lens(70) having a nitride layer lens(62).
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