| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a phase shift mask blank that can prevent the occurrence of a loading effect. <P>SOLUTION: The phase shift mask blank includes a phase shift film containing silicon, a light-shielding film made of a material resistant to etching of the phase shift film, and an etching mask film made of an inorganic material resistant to etching of the light-shielding film, which are formed in this order on a substrate transparent to exposure light. Assuming that the thickness of the phase shift film is t<SB>1</SB>, the etching rate of the phase shift film by dry etching with an etchant using the etching mask film and the light-shielding film as a mask is v<SB>1</SB>, the thickness of the etching mask film is t<SB>2</SB>, and the etching rate of the etching mask film by dry etching with the above etchant is v<SB>2</SB>, (t<SB>1</SB>/v<SB>1</SB>)≤(t<SB>2</SB>/v<SB>2</SB>) is satisfied. <P>COPYRIGHT: (C)2010,JPO&INPIT |
