ETCHING METHOD AND PRODUCING METHOD OF SUBSTRATE FOR SEMICONDUCTOR DEVICE

摘要

<P>PROBLEM TO BE SOLVED: To provide an etching method for actualizing stable etching process in the desired etching rate to the layer mainly formed of titanium and the layer mainly formed of aluminum of the laminated body including both layers mainly formed of titanium and aluminum. Ž<P>SOLUTION: The etching method provided actualizes simultaneous etching to the layer mainly formed of titanium and the layer mainly formed of aluminum of the laminated body formed with inclusion of the layer mainly formed of titanium and the layer mainly formed of aluminum with the etchant containing hydrosilicofluoric acid, hydrosilicofluoric salt, and water. This etching method is characterized in that hydrosilicofluoric acid is supplemented in the amount larger than the equivalent amount of the etched titanium and aluminum with progress of the etching process. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž