| 摘要 |
<P>PROBLEM TO BE SOLVED: To make a low low-dielectric constant film hardly peeled off, in a semiconductor device comprising a low-dielectric film wiring lamination structural part composed of a lamination structure formed of a silicon substrate and the lamination structure of the low-dielectric constant film and wiring which are formed on the silicon substrate. <P>SOLUTION: The lamination structural part 3 comprising a lamination structure of low-dielectric constant films 4 and the wiring 5 is provided on a region excluding an upper periphery of the silicon substrate 1. A peripheral side surface of the lamination structure part 3 of the low-dielectric constant films and the wiring is covered with a sealing film 15. By this, the low-dielectric constant film 4 is hardly peeled off. In this case, the underside of the silicon substrate 1 is provided with an underlayer protective film 18 that protects the underside against a crack or the like. <P>COPYRIGHT: (C)2010,JPO&INPIT |
