发明名称 |
Method of manufacturing film bulk acoustic resonator using internal stress of metallic film and resonator manufactured thereby |
摘要 |
<p>A method of manufacturing a film bulk acoustic resonator and the resonator manufactured thereby. The method includes the laminating a sacrificial layer on a semiconductor substrate, removing a predetermined area from the sacrificial layer to realize electric contact between a signal line of the semiconductor substrate and a lower electrode, forming the lower electrode (320) by depositing metal film for lower electrode on the sacrificial layer, by patterning based on a shape of the sacrificial layer, forming a piezoelectric layer (330) by depositing a piezoelectric material on the lower electrode and by patterning based on a shape of the lower electrode, and forming an upper electrode (340) by depositing metal film on the piezoelectric layer and by patterning based on a shape of the piezoelectric layer, wherein at least one of a deposition pressure and a deposition power is controlled to generate upward stress when depositing the metal film for the lower electrode. <IMAGE></p> |
申请公布号 |
EP1480335(B1) |
申请公布日期 |
2009.11.11 |
申请号 |
EP20040252122 |
申请日期 |
2004.04.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, JONG-SEOK;CHOA, SUNG-HOON;SONG, IN-SANG;HONG, YOUNG-TACK |
分类号 |
H03H3/02;H03H9/15;H03H9/17 |
主分类号 |
H03H3/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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