发明名称 |
Spacer-less low-k dielectric processes |
摘要 |
A first example embodiment provides a method of removing first spacers from gates and incorporating a low-k material into the ILD layer to increase device performance. A second example embodiment comprises replacing the first spacers after silicidation with low-k spacers. This serves to reduce the parasitic capacitances. Also, by implementing the low-k spacers only after silicidation, the embodiments' low-k spacers are not compromised by multiple high dose ion implantations and resist strip steps. The example embodiments can improve device performance, such as the performance of a rim oscillator.
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申请公布号 |
US7615427(B2) |
申请公布日期 |
2009.11.10 |
申请号 |
US20060447565 |
申请日期 |
2006.06.05 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING, LTD. |
发明人 |
LEE YONG MENG;TEH YOUNG WAY;LAI CHUNG WOH;LIN WENHE;LIM KHEE YONG;TAN WEE LENG;KOH HUI PENG;SUDIJONO JOHN;HSIA LIANG CHOO |
分类号 |
H01L21/336;H01L21/8234 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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