| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can effectively prevent migration of charges between adjacent memory cells. SOLUTION: A semiconductor device includes a tunnel insulating film 21 formed on a semiconductor substrate 11, a charge storage insulating film 22 formed on the tunnel insulating film and including at least two separated low oxygen concentration portions 22a and a high oxygen concentration portion 22b positioned between the adjacent low oxygen concentration portions and having a higher oxygen concentration than the low oxygen concentration portions, a charge block insulating film 23 formed on the charge storage insulating film, and control gate electrodes 24 formed on the charge block insulating film and above the low oxygen concentration portions. COPYRIGHT: (C)2010,JPO&INPIT
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