发明名称 EXPOSURE CONDITION DETERMINATION METHOD OF LITHOGRAPHY, EXPOSURE CONDITION DETERMINATION PROGRAM OF LITHOGRAPHY, AND LITHOGRAPHY
摘要 <P>PROBLEM TO BE SOLVED: To easily determine ideal exposure conditions in a lithography. <P>SOLUTION: An exposure condition determination method for determining exposure conditions in the lithography for exposing a pattern to a photosensitive substrate via a projecting means includes a pattern generation step of generating a pattern, an exposure step of exposing a pattern to the photosensitive substrate for a plurality of times by changing the exposure conditions, an imaging step of generating an observation image by capturing an image of the photosensitive substrate where a pattern is exposed for a plurality of times in the exposure process, an image analysis step of analyzing the observation image generated in the imaging process, and a determination step of determining optimum exposure conditions, based on the results of the image analysis in the image analysis process. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009260163(A) 申请公布日期 2009.11.05
申请号 JP20080109931 申请日期 2008.04.21
申请人 NIKON CORP 发明人 SHIBATA HIROMASA
分类号 H01L21/027;G03F7/20 主分类号 H01L21/027
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