| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a structure capable of suppressing an imbalance of a current flowing at breakdown, in an SiC semiconductor device with a structure of crossing deep layers to the inside of a trench. Ž<P>SOLUTION: A number of p-type deep layers 10 are arranged in grid patterns. Namely, a plurality of linear p-type deep layers 10 extendedly provided in a first direction with an inclination of 45 degrees with respect to a longitudinal direction of a trench 6 are lined at equivalent intervals and the plurality of linear p-type deep layers 10 extendedly provided in a second direction with an inclination of 45 degrees to the longitudinal direction of the trench 6 and orthogonal to the first direction are lined at equivalent intervals. Thereby, since the p-type deep layers 10 can be arranged in the grid patterns and it is possible to form a structure in which all of the p-type deep layers 10 are connected, the current flowing at breakdown is dispersed and made to flow over wide ranges of the p-type deep layers 10, and it is possible to prevent such an imbalance that a current concentrates in a part of the p-type deep layers 10 at breakdown. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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