METHOD FOR FORMING FINE PATTERNS BY DOUBLE PATTERNING PROCESS USING ACID DIFFUSION

摘要

PURPOSE: A method for forming a minute pattern of a semiconductor device by a double patterning process using acid diffusion is provided to form various minute patterns by increasing the density of the pattern. CONSTITUTION: A plurality of first mask patterns are formed(210a). A capping layer including an acid source is formed in a side wall and an upper surface of the first mask patterns(210b). A second mask layer filling a first space is formed on the capping layer(210d). The acid diffusion region from the capping layer to the second mask layer is formed(210e-1). A plurality of second mask patterns comprised of the remaining part of the second mask layer are formed. The capping layer includes a water soluble polymer and the acid source.