| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an apparatus for producing an aluminum nitride single crystal where the aluminum nitride single crystal can be produced by quickening its growth rate without increasing the load of energy. Ž<P>SOLUTION: The apparatus for producing the aluminum nitride single crystal has at least a heating furnace body comprising a reaction chamber 3 having an opening part at an upper part and housing a raw material 22 at the bottom side of an inner space 3a and a susceptor 4 to plug the opening part, a first gas supplying means 5a to introduce a process gas from outside to the inner space 3a and a second gas supplying means 5b to introduce a carrier gas from outside to the inner space 3a. A first introducing part 5A located on the sidewall of the reaction chamber 3 so that the first gas supplying means 5a is opened to the inner space 3a and a second introducing part 5B located on the sidewall of the reaction chamber 3 so that the second gas supplying means 5b is opened to the inner space 3a are positioned in this order when seen from the susceptor 4 toward the raw material 22. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
