| 摘要 |
PROBLEM TO BE SOLVED: To provide a phase-change memory device and a method of fabricating the same to increase integration and to reduce an amount of operation current of the phase-change memory device by reducing the contact area between a phase-change material layer and a heating layer. SOLUTION: A phase-change memory device includes a lower electrode 43 and at least two phase-change memory cells 53 sharing the lower electrode 43. Each of the phase-change memory cells 53 includes the heating layer 45 disposed on a corresponding isolated region of the lower electrode 43, a phase-change material layer 46 disposed to cover the heating layer 45, and an upper electrode 47 disposed on the phase-change material layer 46. The phase-change memory device may further include a second insulating layer 48 buried between the isolated regions of the lower electrode 43 and the heating layer 45. COPYRIGHT: (C)2010,JPO&INPIT |
