| 摘要 |
PURPOSE: A group III nitride based semiconductor light emitting diode and a manufacturing method thereof are provided to improve luminance of a light emitting diode by minimizing total reflection of a light generated inside the light emitting diode. CONSTITUTION: A manufacturing method of a group III nitride based semiconductor light emitting diode comprises the following steps: a step for preparing a growth substrate for growing a light emitting structure; a step for forming the light emitting structure on the growth substrate; a step for forming a transparent ohmic contact current spreading layer on a top surface of the light emitting structure; a step for forming a wafer bonding layer on a top surface of the transparent ohmic contact current spreading layer; a step for preparing a patterned supporting substrate; a step for forming a flattening layer on a top surface of the patterned supporting substrate; a step for forming a wafer bonding layer on a top surface of the flattening layer; a step for forming a complex body by contacting the two wafer bonding layers; a step for separating the growth substrate from the complex body; a step for forming a p-type ohmic contact electrode and electrode pad(302) on a top surface of the transparent ohmic contact current spreading layer(206); and a step for forming a partial n-type electrode structure(301). |
