发明名称 SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To widen a detectable stress range in a semiconductor device provided with a single stress sensor. Ž<P>SOLUTION: The semiconductor device includes a contour part BD having a hollow shape open to its upper surface; a thick-wall weight part WG arranged in the contour part BD; a thin-wall flexible part DF for connecting the contour part BD to the weight part WG in such a way as to support the weight part WG with beams in the contour part BD; piezoelectric elements PD1 arranged at the interface between the weight part WG and the flexible part DF or at the interface between the contour part BD and the flexible part DF; a first electrode plate EP1 arranged in the surface of the weight part WG and charged by power feeding from the outside; and a second electrode plate EP2 arranged in the contour part BD and charged by power feeding from the outside. The contour part BD; the weight part WG; and the flexible part DF are integrated members made of the same semiconductor substrate 1. The first electrode plate EP1 and the second electrode plate EP2 are not in the same plane and are arranged in such a way as to be opposed to each other. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2009250646(A) 申请公布日期 2009.10.29
申请号 JP20080095664 申请日期 2008.04.02
申请人 RENESAS TECHNOLOGY CORP 发明人 TAKANASHI TOSHIHIKO
分类号 G01P15/12;H01L29/84 主分类号 G01P15/12
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