Verfahren zur Herstellung einer übereinander geschichteten Gate-Struktur sowie eines damit ausgestatteten Feldeffekttransistors,申请号DE200410027065-传众专利搜索

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发明名称	Verfahren zur Herstellung einer übereinander geschichteten Gate-Struktur sowie eines damit ausgestatteten Feldeffekttransistors
摘要
申请公布号	DE102004027065(B4)	申请公布日期	2009.10.29
申请号	DE200410027065	申请日期	2004.06.03
申请人	NANYA TECHNOLOGY CORPORATION	发明人	HO, TZU-EN;WU, CHANG-RONG
分类号	H01L21/336;H01L21/00;H01L21/28;H01L29/49;H01L29/78	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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