发明名称 CAPACITOR IN SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 A capacitor may include at least one of a polysilicon layer over a semiconductor substrate; a capacitor dielectric layer over a polysilicon layer; an insulating layer over a capacitor dielectric layer; a metal layer connected to a capacitor dielectric layer through a first region of an insulating layer; an upper metal wiring layer connected to a metal layer over an insulating layer; and/or a lower metal wiring line layer connected to a polysilicon layer through a metal contact that passes through a second region of an insulating layer and a capacitor dielectric layer over the insulating layer.
申请公布号 US2009262483(A1) 申请公布日期 2009.10.22
申请号 US20090492026 申请日期 2009.06.25
申请人 KI AN DO 发明人 KI AN DO
分类号 H01G2/00 主分类号 H01G2/00
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